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APTM20AM06S
Phase leg Series & parallel diodes MOSFET Power Module
VDSS = 200V RDSon = 6mW max @ Tj = 25C ID = 300A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * Benefits * * * *
G1 S1
VBUS
0/VBUS
OUT
S2 G2
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 300 225 1200 30 6 1250 24 30 1300 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM20AM06S - Rev 1
May, 2004
Tc = 25C
APTM20AM06S
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1.5mA
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25C
Tj = 125C
Min 200
Typ
Max 500 3 6 5 500
VGS = 10V, ID = 150A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
3
Unit V A mA mW V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 300A RG = 0.8 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8 Min Typ 18.5 6.03 0.58 325 144 156 28 56 81 99 1543 1517 2027 1770 J J Max Unit nF
nC
ns
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s Min Tc = 85C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
nC
APT website - http://www.advancedpower.com
2-6
APTM20AM06S - Rev 1
May, 2004
trr
Reverse Recovery Time
ns
APTM20AM06S
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 130V di/dt = 400A/s Min Tc = 85C Typ 120 1.1 1.4 0.9 31 60 120 500 Min Transistor Diode serie Diode parallel 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 0.46 150 125 100 5 3.5 280 Max 1.15 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM20AM06S - Rev 1
May, 2004
APTM20AM06S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1000 ID, Drain Current (A) ID, Drain Current (A) 800 600 400
7V VGS=15 &
840 720 600 480 360 240 120 0
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
8V
T J=125C
200
6V
TJ=25C
TJ=-55C
0 0 2.5 5 7.5 10 12.5 15 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 100
VGS=20V VGS=10V
2
3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 320 ID, DC Drain Current (A) 600 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (C) 150
May, 2004
Normalized to VGS=10V @ 44.5A
200 300 400 500 ID, Drain Current (A)
APT website - http://www.advancedpower.com
4-6
APTM20AM06S - Rev 1
APTM20AM06S
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area ON resistance vs Temperature
VGS=10V ID= 150A
10000 ID, Drain Current (A)
1000
limited by RDSon
100s 1ms 10ms
100
10 Single pulse TJ=150C
DC line
1
10
100
1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=300A 10 TJ=25C V =100V
DS
VGS, Gate to Source Voltage (V)
8 6 4 2 0 0 60 120 180 240
VDS=160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
300
360
Gate Charge (nC)
May, 2004
APT website - http://www.advancedpower.com
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APTM20AM06S - Rev 1
APTM20AM06S
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20
VDS=133V RG=0.8 TJ=125C L=100H
Rise and Fall times vs Current 160 140 td(off) tr and tf (ns) 120 100 80 60 40 20 0 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) Switching Energy vs Gate Resistance 6000 Switching Energy (J) 5000 4000 3000 2000 1000 0 2 4 6 8 10 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000
VDS=133V ID=300A TJ=125C L=100H VDS=133V RG=0.8 TJ=125C L=100H
tf
tr
td(on)
10 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) Switching Energy vs Current
4000 3500
Eon and Eoff (J)
3000 2500 2000 1500 1000 500
VDS=133V RG=0.8 TJ=125C L=100H
Eon
Eoff
Eoff
Eon
0 100 150 200 250 300 350 400 450 500
ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 30 60 90 120 150 180 210 240 270 ID, Drain Current (A)
VDS=133V D=50% RG=0.8 TJ=125C
IDR, Reverse Drain Current (A)
400
1000
TJ=150C TJ=25C
100
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
May, 2004
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM20AM06S - Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein

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